Ultrafast-electron dynamics and recombination on the Ge(111)(2×1) π-bonded surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1543/fulltext
Reference34 articles.
1. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface
2. Atomic geometry and surface-state spectrum for Ge(111)-(2×1)
3. Photoelectron spectroscopy of surface states on semiconductor surfaces
4. Direct Photoemission Study of the Antibonding Surface-State Band on Ge(111)2×1
5. Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1
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1. Electronic structure of the surface unoccupied band of Ge(001)- c(4×2) : Direct imaging of surface electron relaxation pathways;Physical Review B;2017-09-01
2. Low-temperature scanning tunneling microscopy and spectroscopy of spatial oscillations in the density of states near domain boundaries at theGe(111)2×1surface;Physical Review B;2010-01-11
3. Ultrafast carrier dynamics inSi(111)7×7dangling bonds probed by time-resolved second-harmonic generation and two-photon photoemission;Physical Review B;2006-06-06
4. Femtosecond Transfer Dynamics of Photogenerated Electrons at a Surface Resonance of Reconstructed InP(100);Physical Review Letters;2005-02-14
5. Photoinduced bulk-surface dynamics: time resolved two photon photoemission signals at semiconductor surfaces;Surface Science;2004-06
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