Ultrafast carrier dynamics in a highly excited GaN epilayer
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.115315/fulltext
Reference26 articles.
1. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
2. Dynamics of resonantly excited excitons in GaN
3. Hot electron relaxation time in GaN
4. High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
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