Nanoengineering of lateral strain modulation in quantum well heterostructures-Reference-Cited by-同舟云学术

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Nanoengineering of lateral strain modulation in quantum well heterostructures

Published:2004-03-16 Issue:12 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Grenzer J.,Zeimer U.,Grigorian S. A.,Feranchuk S.,Pietsch U.,Fricke J.,Kissel H.,Knauer A.,Weyers M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.125316/fulltext

Reference15 articles.

1. Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures

2. Ordering of self-assembledSi1−xGexislands studied by grazing incidence small-angle x-ray scattering and atomic force microscopy

3. Strain in buried self-assembled SiGe wires studied by grazing-incidence x-ray diffraction

4. Evaluation of strain distribution in freestanding and buried lateral nanostructures

5. Finite-size effects in one-dimensional strained semiconductor heterostructures

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3. Elastic fields of quantum dots in semi-infinite matrices: Green’s function analytical analysis;Journal of Applied Physics;2009-01-15

4. High resolution measurement of the thermal expansion coefficient of semiconductor multilayer lateral nanostructures;physica status solidi (a);2008-02

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