Electron mobility in Si δ-doped GaAs with spatial correlationsin the distribution of charged impurities
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13093/fulltext
Reference18 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Electron mobility in Si delta doped GaAs
3. Multisubband electron transport in δ-doped semiconductor systems
4. Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit
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1. Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy;Applied Physics Letters;2012-11-05
2. Electrical conduction properties of Si δ-doped GaAs grown by MBE;Physica B: Condensed Matter;2009-11
3. The triple Si δ -doped GaAs structure;Applied Physics A;2005-01
4. Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems;Physical Review B;2004-11-24
5. Spatial correlation effects in the charged impurity distribution on the electronic properties of δ-doped structures;physica status solidi (b);2003-05
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