Vertical transport in GaAs/AlxGa1−xAs superlattices by a microwave time-of-flight technique
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.17614/fulltext
Reference11 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
2. Hopping conduction in a "superlattice"
3. New Transport Phenomenon in a Semiconductor "Superlattice"
4. Optical detection of high‐field domains in GaAs/AlAs superlattices
5. dc and microwave negative differential conductance in GaAs/AlAs superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonequilibrium electron transport in wide minibandGaAs/AlxGa1−xAssuperlattices at room temperature;Physical Review B;2002-05-07
2. TRANSPORT IN EXCITED STATES OF SEMICONDUCTOR SUPERLATTICES;International Journal of Modern Physics B;2000-04-10
3. Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes;Japanese Journal of Applied Physics;1998-03-30
4. Observation of new type resonances in triple barrier resonant tunneling diodes;Journal of Applied Physics;1997-09-15
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