Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.5353/fulltext
Reference33 articles.
1. The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
2. Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy
3. Impurity vibrations of copper defect complexes in gallium arsenide crystals
4. Raman scattering and local force variations due to transition-element impurities in zinc-sulfide crystals: Effect of pressure application
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