Electronic structure of a stepped semiconductor surface: Density functional theory ofSi(114)−(2×1)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.085303/fulltext
Reference15 articles.
1. Behavior of steps on Si(001) as a function of vicinality
2. REM observations of Si(hhk) surfaces and their vicinal surfaces
3. The structure of silicon surfaces from (001) to (111)
4. Structure and Stability ofSi(114)−(2×1)
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1. Surface reconstruction at the initial Ge adsorption stage on Si(114)-2 × 1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03
2. Stress-driven structural transformation of Sb-passivated Si(114);Surface Science;2012-02
3. Irreversible structural transformation of Si(114)-2×1 induced by subsurface carbon;Surface Science;2009-08
4. Elementary structural building blocks encountered in silicon surface reconstructions;Journal of Physics: Condensed Matter;2008-12-01
5. Bridging the structure gap: Chemistry of nanostructured surfaces at well-defined defects;Surface Science Reports;2008-03-31
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