Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems-Reference-Cited by-同舟云学术

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Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

Published:2004-11-24 Issue:19 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mazon K. T.,Hai G.-Q.,Lee M. T.,Koenraad P. M.,van de Stadt A. F. W

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.193312/fulltext

Reference25 articles.

1. Intersubband‐coupling and screening effects on the electron transport in a quasi‐two‐dimensional δ‐doped semiconductor system

2. Multisubband electron transport in δ-doped semiconductor systems

3. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

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1. Graded band gap structure of kesterite material using bilayer of CZTS and CZTSe for enhanced performance: A numerical approach;Solar Energy;2021-03

2. Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures;Superlattices and Microstructures;2012-03

3. A Model System for Dimensional Competition in Nanostructures: A Quantum Wire on a Surface;Nanoscale Research Letters;2008-04

4. Fermions in low-dimensional systems and the transition between bulk and surface properties;Canadian Journal of Physics;2008-04-01

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