Thin [001] and [110] GaAs/AlAs superlattices: Distinction between direct and indirect semiconductors-Reference-Cited by-同舟云学术

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Thin [001] and [110] GaAs/AlAs superlattices: Distinction between direct and indirect semiconductors

Published:1988-08-15 Issue:5 Volume:38 Page:3541-3544
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Eppenga R.,Schuurmans M. F. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.3541/fulltext

Reference23 articles.

1. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition

2. Electronic states in semiconductor heterostructures

3. Long range order in Al0.5Ga0.5As: Local density calculation of the electronic structure

4. Band Structure of Semiconductor Superlattices with Ultrathin Layers (GaAs)n/(AlAs)nwithn=1, 2, 3, 4

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