Filling-driven Mott transition in SU(N) Hubbard models-Reference-Cited by-同舟云学术

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Filling-driven Mott transition in SU(N) Hubbard models

Published:2018-04-30 Issue:16 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee Seung-Sup B.,von Delft Jan,Weichselbaum Andreas

Funder

Alexander von Humboldt-Stiftung

Carl Friedrich von Siemens Stiftung

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.165143/fulltext

Reference72 articles.

1. Metal-insulator transitions

2. Midgap states in doped Mott insulators in infinite dimensions

3. Doped Mott insulator: Results from mean-field theory

4. Integer-filling metal-insulator transitions in the degenerate Hubbard model

5. Band Degeneracy and the Mott Transition: Dynamical Mean Field Study

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equation of State and Thermometry of the 2D SU(N) Fermi-Hubbard Model;Physical Review Letters;2024-02-21

2. Gauge constrained algorithm of variational discrete action theory at N=3 for the multiorbital Hubbard model;Physical Review B;2023-07-13

3. Photoinduced prethermal order parameter dynamics in the two-dimensional large- N Hubbard-Heisenberg model;Physical Review B;2022-12-29

4. SU(4)-symmetric Hubbard model at quarter filling: Insights from the dynamical mean-field approach;Physical Review B;2021-12-03

5. Universal thermodynamics of an SU(N) Fermi-Hubbard model;Physical Review A;2021-10-21

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