Scanning tunneling microscopy study of Si growth on a Si(111)3×3-B surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.12902/fulltext
Reference21 articles.
1. Surface doping and stabilization of Si(111) with boron
2. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
3. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
4. Inhibition of atomic hydrogen etching of Si(111) by boron doping
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1. X-ray structural analysis of an epitaxially grown Ag film/Si(111)$\sqrt{3} \times \sqrt{3} $-B substrate interface;Japanese Journal of Applied Physics;2018-06-20
2. Impact of boron on the step-free area formation on Si(111) mesa structures;Journal of Applied Physics;2015-12-28
3. Hydrogen chemisorption on Si(111)√3×√3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy;Surface Science;2011-08
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