Intrinsic quantum dots in partially ordered bulk (GaIn)P
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.1992/fulltext
Reference34 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Polarization effect in light emitting diodes with ordered GaInP active layers
3. 29.5%‐efficient GaInP/GaAs tandem solar cells
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1. Atomic ordering and bond relaxation in optical spectra of self-organized InP/GaInP2 Wigner molecule structures;Applied Physics Letters;2019-11-11
2. Polarized photoluminescence from point emitters in orderedGaxIn1−xP;Physical Review B;2009-09-29
3. Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys;Physica B: Condensed Matter;2006-04
4. Microstructure of a CuPt-Ordered GaInP Alloy Revealed by Cross-Sectional Scanning Tunneling Microscopy;Japanese Journal of Applied Physics;2006-03-27
5. Polarized light emission from antiphase boundaries acting as slanting quantum wells inGaP∕InPshort-period superlattices;Physical Review B;2005-09-23
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