Fermi-level pinning on ideally terminated InP(110) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.3600/fulltext
Reference30 articles.
1. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds
2. Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1 × 1)-Sb (1 ML)
3. Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure
4. The adsorption and electronic structure of antimony layers on clean cleaved indium phosphide (110) surfaces
5. Unoccupied surface states of (1×1) Sb overlayers on GaAs(110) and InP(110)
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