Vacancy and interstitial defects at graphite surfaces: Scanning tunneling microscopic study of the structure, electronic property, and yield for ion-induced defect creation-Reference-Cited by-同舟云学术

Vacancy and interstitial defects at graphite surfaces: Scanning tunneling microscopic study of the structure, electronic property, and yield for ion-induced defect creation

Published:1999-08-15 Issue:8 Volume:60 Page:6007-6017
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hahn J. R.,Kang H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.6007/fulltext

Reference54 articles.

1. Surface Studies by Scanning Tunneling Microscopy

2. Point defect formation on graphite surface induced by ion impact at energies near penetration threshold

3. On the defect structure due to low energy ion bombardment of graphite

4. Observation of charge enhancement induced by graphite atomic vacancy: A comparative STM and AFM study

5. STM study of Ar+-induced defects produced by near-threshold energy collision

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