Weak localization in back-gated Si/Si0.7Ge0.3quantum-well wires fabricated by reactive ion etching-Reference-Cited by-同舟云学术

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Weak localization in back-gated Si/Si0.7Ge0.3quantum-well wires fabricated by reactive ion etching

Published:1996-10-15 Issue:15 Volume:54 Page:10604-10608
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Koester S. J.,Ismail K.,Lee K. Y.,Chu J. O.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.10604/fulltext

Reference15 articles.

1. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

2. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si

3. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

4. Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

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