Excitonic properties of ZnS quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.155321/fulltext
Reference22 articles.
1. Role of Biexcitons in the Stimulated Emission of Wide-Gap II-VI Quantum Wells
2. Biexcitonic gain characteristics in ZnSe-based lasers with binary wells
3. Suppression of exciton-phonon scattering in quasi-one-dimensional systems
4. Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP
5. Photoluminescence study of ZnS/ZnMgS single quantum wells
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1. Effect of phase transition on the optoelectronic properties of Zn1−xMgxS;Journal of Applied Physics;2012-10
2. Effects of band offsets and the dielectric confinement on exciton binding energy in a strained Zn1-xinMgxinSe/Zn1-xoutMgxoutSe quantum dot;Results in Physics;2012
3. Optical properties of ZnTe and ZnS nanocrystals by critical-points and Tauc–Lorentz models;Thin Solid Films;2011-02
4. Interface Phonon Influences on Formation of Polaron States in Quantum Nanostructures;AIP Conference Proceedings;2011
5. Multiphonon probe in ZnS quantum dots;Journal of Raman Spectroscopy;2010-09-26
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