Dissociation, transformation, and recombination ofSi‐Hbonds in hydrogenated crystalline silicon determined byin situmicro-Raman spectroscopy
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.045206/fulltext
Reference23 articles.
1. Bonding and thermal stability of implanted hydrogen in silicon
2. Infrared absorption of silicon irradiated by protons
3. New infra-red absorption bands in hydrogen-implanted silicon
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