Determination of conduction-band states in GaAs(110), InP(110), and InAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.12625/fulltext
Reference38 articles.
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3. Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemission
4. Experimental study of the band structure of GaP, GaAs, GaSb, InP, InAs, and InSb
5. Critical test of CdTe(100) angle-resolved photoemission spectra with band-structure calculations
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