Ag/6H−SiC(0001)surface phase and its structural transformation upon exposure to atomic hydrogen
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.045406/fulltext
Reference27 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. A 4.5 kV 6H silicon carbide rectifier
3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
4. A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face
5. Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C
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