Coexistence of ferromagnetism and topology by charge carrier engineering in the intrinsic magnetic topological insulator MnBi4Te7-Reference-Cited by-同舟云学术

Coexistence of ferromagnetism and topology by charge carrier engineering in the intrinsic magnetic topological insulator MnBi4Te7

Published:2021-08-18 Issue:7 Volume:104 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chen Bo,Wang Dinghui,Jiang Zhicheng^ORCID,Zhang Bo,Cui Shengtao,Guo Jingwen,Xie Hangkai,Zhang Yong,Naveed Muhammad^ORCID,Du Yu,Wang Xuefeng,Zhang Haijun,Fei Fucong,Shen Dawei,Sun Zhe,Song Fengqi^ORCID

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Hefei Science Center, Chinese Academy of Sciences

Fundamental Research Funds for the Central Universities

Fok Ying Tong Education Foundation

Wuhan National High Magnetic Field Center

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.075134/fulltext

Reference49 articles.

1. Quantized Anomalous Hall Effect in Magnetic Topological Insulators

2. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

3. Quantum anomalous Hall effect

4. The Quantum Anomalous Hall Effect: Theory and Experiment

5. Surface-Quantized Anomalous Hall Current and the Magnetoelectric Effect in Magnetically Disordered Topological Insulators

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