Optically induced excess hole population in semi-insulating GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11762/fulltext
Reference25 articles.
1. Photo-Hall study of the optically enhanced photocurrent in semi-insulating LEC GaAs
2. Relevance of persistent photoconductivity in semi-insulating andn-type semiconducting GaAs to the charge state of metastableEL2 defects
3. Persistent photocurrent in semi-insulating GaAs and its relationship to the deep donor EL2
4. Optical properties of EL2
5. Photoinduced Acceptor Levels in Semiinsulating GaAs
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1. Surface photovoltage spectroscopy of semi-insulating GaAs in the 800–1100 nm range;Applied Physics Letters;2001-09-10
2. Piezoelectric photoacoustic studies of optical recovery of metastable states related to EL2 and EL6 levels in semi-insulating GaAs;Physical Review B;1998-11-15
3. Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs;Journal of Applied Physics;1997-06
4. New experimental approach to the excess carrier transfer in semi‐insulating GaAs based on time‐resolved photovoltage;Applied Physics Letters;1995-01-30
5. Photocurrent transients in semi‐insulating GaAs, effects of EL2 and other defects;Journal of Applied Physics;1994-03-15
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