Impact of strain on the electronic properties of InAs/GaSb quantum well systems-Reference-Cited by-同舟云学术

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Impact of strain on the electronic properties of InAs/GaSb quantum well systems

Published:2017-03-06 Issue:11 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tiemann L.,Mueller S.,Wu Q.-S.,Tschirky T.,Ensslin K.,Wegscheider W.,Troyer M.,Soluyanov A. A.,Ihn T.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.115108/fulltext

Reference33 articles.

1. Valley Susceptibility of an Interacting Two-Dimensional Electron System

2. Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers

3. Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain

4. Band‐structure tailoring by electric field in a weakly coupled electron‐hole system

5. Semimetal-semiconductor transition in InAsGaSb heterostructures

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tc and resistivity variation induced by external bending strain in flexible film of strain-sensitive (La,Sr)2CuO4;Physical Review Materials;2024-09-12

2. First-principles feasibility assessment of a topological insulator at the InAs/GaSb interface;Physical Review Materials;2021-08-18

3. Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells;Physical Review B;2020-02-27

4. Magnetotransport properties and stress control of HgCdTe thin film;Acta Physica Sinica;2020

5. Robust helical edge transport in quantum spin Hall quantum wells;Physical Review B;2018-11-14

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