Flexible approach to exciton binding energies in type-I and type-II quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1485/fulltext
Reference19 articles.
1. Exciton binding energy in type-II GaAs-(Al,Ga)As quantum-well heterostructures
2. Excitons in type-II quantum-well systems: Binding of the spatially separated electron and hole
3. Exchange interaction in type-II quantum wells
4. Exciton states in type-I and type-II GaAs/Ga1−xAlxAs superlattices
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1. Quantum beats of type-I and type-II excitons in an InxGa1−xAs/GaAs strained single quantum well;Journal of Applied Physics;2012-08-15
2. Stability of electron-hole plasma in type-I and type-II GaAs-GaAlAs single quantum wells;Physical Review B;2004-04-22
3. Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure;Physica E: Low-dimensional Systems and Nanostructures;2004-03
4. DYNAMICAL CHAOS AND NONEQUILIBRIUM STATISTICAL MECHANICS;International Journal of Modern Physics B;2001-01-30
5. Oscillator strength of type-II light-hole exciton in InxGa1−xAs/GaAs strained single quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2000-05
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