Coulomb correction to the dressed exciton in an inorganic-organic layered semiconductor: Detuning dependence of the Stark shift-Reference-Cited by-同舟云学术

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Coulomb correction to the dressed exciton in an inorganic-organic layered semiconductor: Detuning dependence of the Stark shift

Published:2004-04-08 Issue:15 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shimizu Makoto,Gippius Nikolai A.,Tikhodeev Sergei G.,Ishihara Teruya

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.155201/fulltext

Reference22 articles.

1. Observation of the Resonant Optical Stark Effect in a Semiconductor

2. "Dressed Excitons" in a Multiple-Quantum-Well Structure: Evidence for an Optical Stark Effect with Femtosecond Response Time

3. Optical Stark effect on excitons in GaAs quantum wells

4. Dressed-atom description of resonance fluorescence and absorption spectra of a multi-level atom in an intense laser beam

5. Collective Excitations and the Dynamical Stark Effect in a Coherently Driven Exciton System

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