Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.7421/fulltext
Reference24 articles.
1. Low-temperature exciton trapping on interface defects in semiconductor quantum wells
2. Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors
3. Exciton thermalization in quantum-well structures
4. Resonant Rayleigh Scattering from an Inhomogeneously Broadened Transition: A New Probe of the Homogeneous Linewidth
5. Studies of exciton localization in quantum-well structures by nonlinear-optical techniques
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