Topological phase transition in Sb-doped Mg3Bi2 monocrystalline thin films
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.125405/fulltext
Reference37 articles.
1. Band structure engineering of topological insulator heterojunctions
2. Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
3. Band gap engineering via doping: A predictive approach
4. Band engineering in Mg3Sb2 by alloying with Mg3Bi2 for enhanced thermoelectric performance
5. Topological crystalline insulator nanomembrane with strain-tunable band gap
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1. Structural evolution and thermoelectric properties of Mg3SbxBi2−x thin films deposited by magnetron sputtering;Journal of Vacuum Science & Technology A;2023-06-13
2. Realizing enhanced thermoelectric performance in an n-type Mg3(Bi,Sb)2-based film;Journal of Materials Chemistry C;2023
3. Topological alloy engineering and locally linearized gap dependence on concentration;Physical Review B;2022-08-04
4. Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering;Applied Physics Letters;2022-01-31
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