Ab initio study of ZnO (101¯0) surface relaxation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.11153/fulltext
Reference20 articles.
1. Total-energy calculations of semiconductor surface reconstructions
2. Calculation of low-energy-electron-diffraction intensities fromZnO(101¯0). II. Influence of calculational procedure, model potential, and second-layer structural distortions
3. Relaxation and surface states on wurtzite cleavage faces:CdSe(101¯0)
4. Surface structure determination of the cleavage faces of CdSe via low‐energy positron diffraction
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