Influence of high-energy electron irradiation on the formation and annihilation of the photoluminescenceWcenter and the center’s origin in a proton-implanted silicon crystal-Reference-Cited by-同舟云学术

Influence of high-energy electron irradiation on the formation and annihilation of the photoluminescenceWcenter and the center’s origin in a proton-implanted silicon crystal

Published:2002-10-07 Issue:15 Volume:66 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Nakamura Minoru,Nagai Siro

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.155204/fulltext

Reference36 articles.

1. The optical properties of luminescence centres in silicon

2. Ion-induced defects in semiconductors

3. Defects in silicon

4. Annealing of divacancy-related infrared absorption bands in boron-doped silicon

5. An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si

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