Topological line defects in hexagonal SiC monolayer-Reference-Cited by-同舟云学术

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Topological line defects in hexagonal SiC monolayer

Published:2023 Issue:48 Volume:25 Page:33048-33055
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Morais Wallace P.¹^ORCID,Inacio Guilherme J.¹^ORCID,Amorim Rodrigo G.²^ORCID,Paz Wendel S.¹^ORCID,Pansini Fernando N. N.¹^ORCID,de Souza Fábio A. L.³^ORCID

Affiliation:

1. Departamento de Física, Universidade Federal do Espírito Santo, Vitória-ES, 29075-910, Brazil

2. Departamento de Física, ICEx, Universidade Federal Fluminense – UFF, Volta Redonda/RJ, Brazil

3. Instituto Federal do Espírito Santo, Ibatiba-ES, 29395-000, Brazil

Abstract

Defect engineering of two-dimensional (2D) materials offers an unprecedented route to increase their functionality and broaden their applicability.

Funder

Fundação de Amparo à Pesquisa e Inovação do Espírito Santo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP04267G

Reference78 articles.

1. Growth and applications of two-dimensional single crystals

2. 2D materials, synthesis, characterization and toxicity: A critical review

3. Emerging Applications of Elemental 2D Materials

4. Electric Field Effect in Atomically Thin Carbon Films

5. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

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