Bridgman growth and electrical properties of Nd-doped PMN–PT single crystal with ultrahigh piezoelectricity-Reference-Cited by-同舟云学术

Bridgman growth and electrical properties of Nd-doped PMN–PT single crystal with ultrahigh piezoelectricity

Published:2022 Issue:4 Volume:24 Page:837-845
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen Ziyun¹²^ORCID,Deng Tingyu²³,Chen Rui²,Lin Di²,Di Wenning²,Chen Hongbing⁴^ORCID,Luo Haosu²,Han Tao¹

Affiliation:

1. Department of Instrument Science & and Engineering, Shanghai Jiao Tong University, 200240, China

2. Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 201800, China

3. School of Materials Science and Engineering, Changzhou University, Changzhou, 213164, China

4. Institute of Inorganic Materials, Ningbo University, Ningbo 315211, China

Abstract

The work presents electrical properties of Nd–PMN–PT single crystal grown by Bridgman method. As-grown crystal has been verified to have ultrahigh piezoelectric coefficient d33 with maximum value of 3650 pC N−1 under alternating current polarization.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01116B

Reference31 articles.

1. High performance single crystal piezoelectrics: applications and issues

2. High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective