Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2011/JM/C1JM11763G
Reference19 articles.
1. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
2. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
3. Nucleation and Growth Behavior of Atomic Layer Deposited HfO[sub 2] Films on Silicon Oxide Starting Surfaces
4. Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility
5. Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
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3. Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing;Journal of Alloys and Compounds;2017-05
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