Low temperature and high-performance ZnSnO thin-film transistors engineered by in situ thermal manipulation
Author:
Affiliation:
1. School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China
2. School of Integrated Circuits, Peking University, Beijing, 100871, China
Abstract
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05651D
Reference50 articles.
1. Anodized ITO Thin‐Film Transistors
2. Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors
3. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
5. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
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