β-Ga2O3: ultralow-loss and low-permittivity dielectric ceramic for high-frequency packaging substrate

Author:

Wang Wei1ORCID,Du Chao1,Wang Xin1,Xu Diming1ORCID,Qiu Hong-Song2,Jin Biao-Bing2,Shi Zhong-Qi3ORCID,Hussain Fayaz4ORCID,Darwish Moustafa Adel5ORCID,Zhou Tao6,Chen Ya-Wei7,Liang Qi-Xin7,Zhang Mei-Rong7,Zhou Di1ORCID

Affiliation:

1. Key Laboratory of Multifunctional Materials and Structures, Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China

2. Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, China

3. State Key Laboratory for Mechanical Behaviour of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China

4. Department of Materials Engineering, NED University of Engineering & Technology, Karachi 75270, Pakistan

5. Physics Department, Faculty of Science, Tanta University, Al-Geish st., Tanta 31527, Egypt

6. School of Electronic and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, China

7. Shenzhen Microgate Technology Co., Ltd, Shenzhen 518118, Guangdong, China

Abstract

The β-Ga2O3 ceramic exhibits excellent dielectric properties with a Q × f of 133 140 GHz and εr of 9.57. A sub-6 GHz patch antenna was designed and fabricated using a Ga2O3 ceramic substrate, showing great potential for high-frequency applications.

Funder

Science and Technology Program of Zhejiang Province

Fundamental Research Funds for the Central Universities

Higher Education Discipline Innovation Project

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

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