The strategies of filament control for improving the resistive switching performance-Reference-Cited by-同舟云学术

The strategies of filament control for improving the resistive switching performance

Published:2020 Issue:46 Volume:8 Page:16295-16317
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Teng¹²³,Yu Hongliang⁴³,Chen Stephenie Hiu Yuet⁵⁶⁷,Zhou Ye⁴³^ORCID,Han Su-Ting¹²³^ORCID

Affiliation:

1. Institute of Microscale optoelectronics and College of Electronics and Information Engineering, Shenzhen University

2. Shenzhen 518060

3. P. R. China

4. Institute for Advanced Study, Shenzhen University Shenzhen

5. Harrow International School Hong Kong

6. Tuen Mun

7. Hong Kong

Abstract

The recent developments of filament control in resistive switching devices including electrode optimization, switching layer optimization and channel design are reviewed.

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Shenzhen Science and Technology Innovation Commission

Shenzhen University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03639K

Reference168 articles.

1. The missing memristor found

2. Deep learning

3. Human-level control through deep reinforcement learning

4. New conduction and reversible memory phenomena in thin insulating films

5. Resistive switching phenomena in thin films: Materials, devices, and applications

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