Engineering electronic properties of metal–MoSe2 interfaces using self-assembled monolayers-Reference-Cited by-同舟云学术

Engineering electronic properties of metal–MoSe2 interfaces using self-assembled monolayers

Published:2014 Issue:46 Volume:2 Page:9842-9849
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Çakır Deniz¹²³,Sevik Cem⁴⁵⁶⁷,Peeters François M.¹²³

Affiliation:

1. Department of Physics

2. University of Antwerp

3. 2020 Antwerp, Belgium

4. Department of Mechanical Engineering

5. Faculty of Engineering

6. Anadolu University

7. Eskisehir, Turkey

Abstract

The electronic properties of MoSe₂ can be modified by manipulating its interaction with metal electrodes using a self-assembled monolayer of polar molecules.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC01794C

Reference56 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Mind the gap

3. The electronic properties of graphene

4. Electronic transport in two-dimensional graphene

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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