The preparation of polysilicon films on highly boron doped silicon substrates and their effects on Cu out-diffusion-Reference-Cited by-同舟云学术

The preparation of polysilicon films on highly boron doped silicon substrates and their effects on Cu out-diffusion

Published:2024 Issue:8 Volume:14 Page:5207-5215
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Qingxu¹²^ORCID,Zhou Zaifu²,Shen Yijun³,Rao Weixing³,Xiao Shihao³,Wu Xiongjie³,Zhang Lian³,Liu Dandan²,Wang Zonghua¹^ORCID

Affiliation:

1. College of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, China

2. Zhejiang Zhonghe Technology Co., Ltd, Hangzhou 310027, China

3. Zhejiang Haina Semiconductor Co., Ltd, Quzhou 324000, China

Abstract

The impurity gettering efficiency of the polysilicon film significantly hinders the out diffusion of Cu in the heavily boron-doped mono-silicon substrate. Moreover, as the thickness and layer count of the polysilicon film increase, its gettering effectiveness is further enhanced.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA08772G

Reference37 articles.

1. Silicon Wafers; Its Manufacturing Processes and Finishing Techniques: an Overview

2. Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism

3. Effects of electric field on polysilicon gettering of iron and copper in highly boron-doped silicon

4. A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers

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