Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition-Reference-Cited by-同舟云学术

Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition

Published:2020 Issue:35 Volume:8 Page:12240-12246
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Huang Yu¹²³⁴,Zhou Xiaoyu¹²³⁴,Zhang Lichun¹²³⁴^ORCID,Lin Guochen⁵⁶⁷⁴,Xu Man¹²³⁴,Zhao Yuan¹²³⁴,Jiao Mengmeng¹²³⁴^ORCID,Zhang Dengying¹²³⁴,Pan Bingying¹²³⁴,Zhu Linwei¹²³⁴,Zhao Fengzhou¹²³⁴

Affiliation:

1. School of Physics and Optoelectronic Engineering

2. Ludong University

3. Yantai

4. China

5. College of Life and Environmental Sciences

6. Minzu University of China

7. Beijing

Abstract

Heterojunction light-emitting diodes (LEDs) based on n-ZnO/CsPbBr₃/p-GaN have been fabricated by using pulsed laser deposition (PLD).

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02807J

Reference43 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes

3. Monolithic Broadband InGaN Light-Emitting Diode

4. Geometry Controlled White Light Emission and Extraction in CdS/Black-Si Conical Heterojunctions

5. Improvement of Light Extraction Efficiency in Flip-Chip Light Emitting Diodes on SiC Substrate via Transparent Haze Films with Morphology-Controlled Collapsed Alumina Nanorods

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