Type-II lateral SnSe/GeTe heterostructures for solar photovoltaic applications with high efficiency-Reference-Cited by-同舟云学术

Type-II lateral SnSe/GeTe heterostructures for solar photovoltaic applications with high efficiency

Published:2021 Issue:12 Volume:3 Page:3643-3649
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zhuang Qianyong¹²³⁴²,Li Jin¹²³⁴²^ORCID,He Chaoyu¹²³⁴²,Ouyang Tao¹²³⁴²^ORCID,Zhang Chunxiao¹²³⁴²^ORCID,Tang Chao¹²³⁴²,Zhong Jianxin¹²³⁴²

Affiliation:

1. Hunan Key Laboratory of Micro-Nano Energy Materials and Devices

2. Xiangtan University

3. People's Republic of China

4. School of Physics and Optoelectronics

Abstract

SnSn/GeTe lateral heterostructures are semiconductors with type II band alignment and possess high absorption over a wide range of visible light and high power conversion efficiency (up to 22.3%).

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Changjiang Scholar Program of Chinese Ministry of Education

Scientific Research Foundation of Hunan Provincial Education Department

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00209K

Reference58 articles.

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2. Monolayer HfTeSe4: A Promising Two-Dimensional Photovoltaic Material for Solar Cells with High Efficiency

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Electric Field Effect in Atomically Thin Carbon Films

5. Two-dimensional atomic crystals

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