Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors-Reference-Cited by-同舟云学术

Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors

Published:2018 Issue:40 Volume:10 Page:19131-19139
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Su Meng¹²³⁴⁵,Zou Xuming¹²³⁴⁵,Gong Youning⁶⁷⁸⁵^ORCID,Wang Jianlu⁹¹⁰¹¹¹²⁵,Liu Yuan¹²³⁴⁵,Ho Johnny C.¹³¹⁴¹⁵⁵^ORCID,Liu Xingqiang¹²³⁴⁵^ORCID,Liao Lei¹²³⁴⁵

Affiliation:

1. Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education

2. School of Physics and Electronics

3. Hunan University

4. Changsha 410082

5. China

6. School of Physics and Technology

7. Wuhan University

8. Wuhan 430072

9. National Laboratory for Infrared Physics

10. Shanghai Institute of Technical Physics

11. Chinese Academy of Sciences

12. Shanghai 200083

13. Department of Materials Science and Engineering

14. City University of Hong Kong Tat Chee Avenue

15. Kowloon

Abstract

Nanowire based NC-FETs with SS values below 60 mV dec⁻¹ are demonstrated. Short channel devices are fabricated using a self-alignment approach.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR06163G

Reference45 articles.

1. It’s Time to Reinvent the Transistor!

2. Negative capacitance detected

3. Negative capacitance in a ferroelectric capacitor

4. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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