Electronic and magnetic properties of transition-metal-doped monolayer B<sub>2</sub>S<sub>2</sub> within GGA + <i>U</i> framework-Reference-Cited by-同舟云学术

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Electronic and magnetic properties of transition-metal-doped monolayer B₂S₂ within GGA + U framework

Published:2024 Issue:5 Volume:14 Page:3390-3399
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen Wei¹^ORCID,Chen Qi²,Zhang Jianming³,Zhou Lin¹,Tang Wenxiao¹,Wang Zhiyou¹,Deng Jiwei¹,Wang Shifeng⁴

Affiliation:

1. School of Electronic Information and Electrical Engineering, Changsha University, Changsha, 410022, China

2. Zhongxiang No. 2 Middle School, Jingmen, 431900, China

3. Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China

4. College of Information Engineering, Hunan Industry Polytechnic, 410000, China

Abstract

The calculated band structures DOS and PDOS of Pd-TM doped B2S2 monolayer with 3.12% doping.

Funder

Natural Science Foundation of Hunan Province

Education Department of Hunan Province

Natural Science Foundation of Yunnan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA08472H

Reference56 articles.

1. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals

2. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

3. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

4. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

5. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

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