Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone
Author:
Affiliation:
1. School of Chemical Engineering and Materials
2. Heilongjiang University
3. Harbin 150080
4. P. R. China
5. School of Electronic Engineering
6. South China Advanced Institute for Soft Matter Science and Technology
Abstract
The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior.
Funder
National Natural Science Foundation of China
Heilongjiang University
Natural Science Foundation of Heilongjiang Province
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA00667J
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1. Facile Synthesis of Co9Se8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device
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3. Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites
4. Yolk–shell nanorattles encapsulating a movable Au nanocore in electroactive polyaniline shells for flexible memory device
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