A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures-Reference-Cited by-同舟云学术

A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Published:2020 Issue:4 Volume:2 Page:1449-1455
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Cho Jong-Hoi¹²³⁴⁵,Lim Seung-Hyuk¹²³⁴⁵,Jang Min-Ho¹²³⁴⁵,Lee Chulwon¹²³⁴⁵,Yeo Hwan-Seop¹²³⁴⁵,Sim Young Chul¹²³⁴⁵,Kim Je-Hyung¹²³⁴⁵,Matta Samuel⁶⁷⁸⁹¹⁰,Alloing Blandine⁶⁷⁸⁹¹⁰,Leroux Mathieu⁶⁷⁸⁹¹⁰,Park Seoung-Hwan¹¹¹²¹³⁵,Brault Julien⁶⁷⁸⁹¹⁰,Cho Yong-Hoon¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. KI for the NanoCentury

3. Korea Advanced Institute of Science and Technology (KAIST)

4. Daejeon 34141

5. Republic of Korea

6. Université Côte d'Azur

7. CNRS

8. CRHEA

9. 06560 Valbonne

10. France

11. Department of Electronics Engineering

12. Catholic University of Daegu

13. Kyeongsan 38430

Abstract

Broadband ultraviolet solid-state light emitter has been demonstrated based on the combined structure of MOCVD grown microstructure and the MBE grown quantum dots, thanks to the strain inhomogeneity of the multi-facet semiconductor microstructure.

Funder

National Research Foundation of Korea

Agence Nationale de la Recherche

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00052C

Reference32 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire