Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

Author:

Arroyo-Gascón Olga12,Baba Yuriko2ORCID,Cerdá Jorge I.1,de Abril Oscar3ORCID,Martínez Ruth2,Domínguez-Adame Francisco2ORCID,Chico Leonor12ORCID

Affiliation:

1. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, C/Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain

2. GISC, Departamento de Física de Materiales, Universidad Complutense, E-28040 Madrid, Spain

3. Departamento de Estructuras y Física de Edificación, Universidad Politécnica de Madrid, E-28040 Madrid, Spain

Abstract

Topologically protected surface states in semi-infinite SnTe are robust against Sb doping and preserve their spin texture, whereas in slabs they show a gap. These states are studied using first-principles and continuum model calculations.

Funder

Ministerio de Economía y Competitividad

Ministerio de Ciencia e Innovación

Agencia Estatal de Investigación

European Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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