The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect-Reference-Cited by-同舟云学术

The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect

Published:2016 Issue:31 Volume:18 Page:21371-21380
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Park Jin Woo¹²³⁴,Lee Kyu Il¹²³⁴,Choi Youn-Suk¹²³⁴,Kim Jung-Hwa¹²³⁴,Jeong Daun¹²³⁴,Kwon Young-Nam¹²³⁴,Park Jong-Bong¹²³⁴,Ahn Ho Young¹²³⁴,Park Jeong-Il¹²³⁴,Lee Hyo Sug¹²³⁴,Shin Jaikwang¹²³⁴

Affiliation:

1. Samsung Advanced Institute of Technology

2. Samsung Electronics Co. Ltd.

3. Suwon-si

4. Republic of Korea

Abstract

A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP02993K

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