Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Published:2018 Issue:46 Volume:6 Page:12518-12528
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ma Hong-Ping¹²³^ORCID,Lu Hong-Liang¹²³^ORCID,Wang Tao¹²³,Yang Jian-Guo¹²³,Li Xing¹²³,Chen Jin-Xin¹²³,Tao Jia-Jia¹²³,Zhu Jing-Tao⁴⁵³,Guo Qixin⁶⁷⁸^ORCID,Zhang David Wei¹²³

Affiliation:

1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University

2. Shanghai 200433

3. China

4. Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University

5. Shanghai 200092

6. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University

7. Saga 840-8502

8. Japan

Abstract

Ultrathin Ga₂O₃ films nanomixed with few atom-thick SiO₂ interlayer were deposited on silicon and quartz substrates through plasma-enhanced atomic layer deposition.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

State Key Laboratory of Luminescence and Applications

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04335C

Reference56 articles.

1. A review of Ga2O3materials, processing, and devices