A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions-Reference-Cited by-同舟云学术

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A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions

Published:2019 Issue:9 Volume:1 Page:3372-3378
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Courtin Jules¹²³⁴⁵,Le Gall Sylvain⁶²⁷⁸⁹,Chrétien Pascal⁶²⁷⁸⁹,Moréac Alain¹²³⁴⁵,Delhaye Gabriel¹²³⁴⁵,Lépine Bruno¹²³⁴⁵,Tricot Sylvain¹²³⁴⁵,Turban Pascal¹²³⁴⁵,Schieffer Philippe¹²³⁴⁵,Le Breton Jean-Christophe¹²³⁴⁵^ORCID

Affiliation:

1. Univ. Rennes

2. CNRS

3. IPR (Institut de Physique de Rennes)

4. UMR 6251

5. F-35000 Rennes

6. Group of Electrical Engineering Paris (GeePs)

7. CentraleSupélec

8. Univ. Paris-Sud

9. Sorbonne Université

Abstract

ResiScope mapping showing the strong reduction of resistance induced by a graphene sheet inserted between silicon and gold.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NA/C9NA00393B

Reference45 articles.

1. Mechanisms of Schottky-barrier formation in metal–semiconductor contacts

2. Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

3. Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole

4. Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts

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1. Enhanced Performance of Self‐Powered Ge Schottky Photodetectors Enabled by 2D hBN Monolayer Passivation;Advanced Materials Technologies;2024-07-18

2. In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors;ACS Applied Materials & Interfaces;2023-11-30

3. Penta-SiCN monolayer as a well-balanced performance anode material for Li-ion batteries;Physical Chemistry Chemical Physics;2023

4. Etch and Print: Graphene-Based Diodes for Silicon Technology;ACS Nano;2022-12-07

5. A review on electrical transport properties of thin film Schottky diode;IOP Conference Series: Materials Science and Engineering;2022-10-01

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