Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films-Reference-Cited by-同舟云学术

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

Published:2018 Issue:28 Volume:10 Page:13443-13448
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ahn Yoonho¹²³^ORCID,Shin Hyun Wook⁴⁵⁶³,Lee Tae Hoon⁷⁸⁹³,Kim Woo-Hee¹⁰¹¹¹²³,Son Jong Yeog⁴⁵⁶³^ORCID

Affiliation:

1. School of Liberal Arts

2. Korea University of Technology and Education

3. Republic of Korea

4. Department of Applied Physics and Institute of Natural Sciences

5. Kyung Hee University

6. Yongin 17104

7. Department of Electrical Engineering

8. Kwangwoon University

9. Seoul 01897

10. Division of Advanced Materials Engineering

11. Chonbuk National University

12. Jeonju 54896

Abstract

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR02986E

Reference45 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Nanoionics-based resistive switching memories

3. Resistive switching in transition metal oxides

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

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