Negative photoconductivity of InAs nanowires-Reference-Cited by-同舟云学术

Negative photoconductivity of InAs nanowires

Published:2016 Issue:2 Volume:18 Page:818-826
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Han Yuxiang¹²³⁴,Zheng Xiao¹²³⁴,Fu Mengqi¹²³⁴,Pan Dong⁵⁶⁷⁸⁹,Li Xing¹²³⁴,Guo Yao¹²³⁴,Zhao Jianhua⁵⁶⁷⁸⁹,Chen Qing¹²³⁴

Affiliation:

1. Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics

2. Peking University

3. Beijing 100871

4. People's Republic of China

5. State Key Laboratory of Superlattices and Microstructures

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

9. China

Abstract

Negative photoconductivity is observed in InAs nanowires without a surface defective layer, and is induced by gas adsorption and the photogating effect.

Funder

Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06139C

Reference30 articles.

1. High Electron Mobility InAs Nanowire Field-Effect Transistors

2. Fermi Level Position at Semiconductor Surfaces

3. Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

4. High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared

5. High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

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