Structural and electronic properties of hydrogenated GaBi and InBi honeycomb monolayers with point defects
Author:
Affiliation:
1. State Key Laboratory of Information Photonics and Optical Communications
2. Beijing University of Posts and Telecommunications
3. Beijing 100876
4. China
Abstract
Vacancies, antisites and Stone–Wales defects in H2-Ga(In)Bi monolayer are investigated using first-principles calculations.
Funder
National Natural Science Foundation of China
Beijing University of Posts and Telecommunications
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA00369F
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