Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method-Reference-Cited by-同舟云学术

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Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

Published:2014 Issue:11 Volume:16 Page:2317
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Tian Yuan,Zhang Lei,Wu Yongzhong,Shao Yongliang,Dai Yuanbin,Zhang Haodong,Wei Rusheng,Hao Xiaopeng

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C3CE41404C

Reference30 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Recent Progress in GaN-Based Light-Emitting Diodes

4. GaN boules grown by high rate HVPE

5. Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

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1. Epitaxy of single-crystalline GaN films on novel Ca3Ta(Ga0.5Al0.5)3Si2O14 substrates by metal-organic chemical vapor deposition;Vacuum;2023-01

2. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties;CrystEngComm;2023

3. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN;CrystEngComm;2021

4. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector;physica status solidi (a);2020-09-03

5. Effect of annealing atmosphere (CO and N2 gas flow) on surface morphology and crystal quality of AlN buffer layer;Ceramics International;2020-06

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